Polarized emission lines from A- and B-type excitonic complexes in single 
InGaN/GaN quantum dots

Winkelnkemper, Momme; Seguin, R.; Rodt, S.; Schliwa, A.; Reißmann, L.; Strittmacher, A.; Hoffmann, A.; Bimberg, D.

doi:10.1063/1.2743893

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Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

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Winkelnkemper, Momme
Theory, Fritz Haber Institute, Max Planck Society;

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引用

Winkelnkemper, M., Seguin, R., Rodt, S., Schliwa, A., Reißmann, L., Strittmacher, A., Hoffmann, A., & Bimberg, D. (2007). Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots. Journal of Applied Physics, 101(11):. doi:10.1063/1.2743893.

引用: https://hdl.handle.net/11858/00-001M-0000-0011-0099-2

要旨

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1120] and [1100]. Realistic eight-band k·p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are formed either by the A or the B valence band.