Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1)√3x 
√3 carbon structure

Kim, Jeong Won; Kampen, Thorsten U.; Horn, Karsten; Jung, M.-C.

doi:10.1016/j.susc.2006.10.033

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Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1)√3x √3 carbon structure

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Kampen, Thorsten U.
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Horn, Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Citation

Kim, J. W., Kampen, T. U., Horn, K., & Jung, M.-C. (2007). Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1)√3x √3 carbon structure. Surface Science, 601(3), 694-698. doi:10.1016/j.susc.2006.10.033.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-019D-1

Abstract

Adsorption and thermal decomposition of ethylene on Si(1 1 1) have been studied by photoelectron spectroscopy. The evolution of the C 1s and Si 2p core-levels upon the adsorption of the ethylene and the formation of C-incorporated surfaces by thermal annealing is analyzed, from which the unique chemical and structural properties of √3x √3 reconstructed phase can be derived. We also discuss the coverage of the C atoms involved and their position on the √3x √3 surface in terms of a structure model.