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要旨

Semiconductor nanowires (NWs) are promising candidates for applications in nanoscale electronic and optoelectronic devices. In recent years, much effort has been devoted to synthesizing NWs with controlled morphology and structure using various approaches, for example, laser-assisted chemical vapor deposition (CVD), oxide-assisted CVD, thermal CVD, metal-catalyzed molecular beam epitaxy (MBE)and chemical beam epitaxy (CBE). Among these techniques, the metal-catalytic (also called the vapour-liquid-solid (VLS)) growth method offers a number of advantages.
We have reported the synthesis of II-VI semiconductor NWs based on Au-catalyzed VLS MBE. The MBE technique provides an ideal clean growth environment in which the atomic structure, impurity, and doping state can be easily controlled.