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Interrelation of structural and electronic properties in InxGa1-xN/GaN quantum dots using an eight-band k · p model

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Winkelnkemper,  Momme
Theory, Fritz Haber Institute, Max Planck Society;

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Winkelnkemper, M., Schliwa, A., & Bimberg, D. (2006). Interrelation of structural and electronic properties in InxGa1-xN/GaN quantum dots using an eight-band k · p model. Physical Review B, 74(15): 155322. doi:10.1103/PhysRevB.74.155322.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-034C-7
Abstract
We present an eight-band k·p-model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InxGa1−xN) QDs formed by composition fluctuations in InxGa1−xN layers. The eight-band k·p-model accounts for strain effects, piezoelectricity and pyroelectricity, and spin-orbit and crystal-field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InxGa1−xN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.