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Low temperature CO induced growth of Pd supported on a monolayer silica film

MPS-Authors
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Lu,  Junling
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Kaya,  Sarp
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Weissenrieder,  Jonas
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Shaikhutdinov,  Shamil
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Freund,  Hans-Joachim
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Citation

Lu, J., Kaya, S., Weissenrieder, J., Gao, H., Shaikhutdinov, S., & Freund, H.-J. (2006). Low temperature CO induced growth of Pd supported on a monolayer silica film. Surface Science Letters, 600(12), L153-L157. doi:10.1016/j.susc.2006.04.034.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-0426-4
Abstract
Nucleation, growth and sintering of Pd deposited on an ultra-thin silica film were studied by scanning tunneling microscopy and infrared reflection absorption spectroscopy. No preferential nucleation of Pd on the silica surface was observed both at 90 and 300 K deposition. When adsorbed on Pd clusters formed at 90 K, CO causes a strong sintering effect even at this temperature. The results are rationalized on the basis of a high mobility of Pd carbonyl-like species on the silica film. At a given Pd coverage, the extent of CO induced sintering cannot be achieved by annealing in vacuum. In addition, vacuum sintering, which commences above 700 K, goes simultaneously with interdiffusion of Pd and support.