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Shape transition of InAs quantum dots on the GaAs(001)

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Xu,  Ming Chun
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Temko,  Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Suzuki,  Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Xu, M. C., Temko, Y., Suzuki, T., & Jacobi, K. (2005). Shape transition of InAs quantum dots on the GaAs(001). Journal of Applied Physics, 98(8), 083525–1-083525–8. doi:10.1063/1.2076431.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-0726-6
Abstract
InAs quantum dots (QD's) grown by molecular-beam epitaxy on GaAs(001) substrates were studied by atomically resolved in situ (without breaking a ultrahigh vacuum) scanning tunneling microscopy. A detailed sequence of shapes, appearing during the growth process, is evaluated: The smallest QD is terminated by {137}A bounding facets with a rhombic base. With increasing size, {135}B and {112}B facets appear in succession besides {137}A, making the QD more rounded. At a critical diameter of the base, the QD undergoes a shape transition from flat to steep by the formation of steeper {110} and {111} facets at the sides and gradually achieves a squared base. For all QD's the {137}A facets remain on top. Almost all shapes that have been observed for InAs QD's on GaAs(001) in earlier publications are covered.