Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

DATENSATZ AKTIONENEXPORT

Freigegeben

Zeitschriftenartikel

Molecular-beam-epitaxy grown InAs islands on nominal and vicinal GaAs(2511)A surfaces

MPG-Autoren
/persons/resource/persons22160

Temko,  Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons22151

Suzuki,  Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons22261

Xu,  Ming Chun
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21665

Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

Externe Ressourcen
Es sind keine externen Ressourcen hinterlegt
Volltexte (beschränkter Zugriff)
Für Ihren IP-Bereich sind aktuell keine Volltexte freigegeben.
Volltexte (frei zugänglich)
Es sind keine frei zugänglichen Volltexte in PuRe verfügbar
Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar
Zitation

Temko, Y., Suzuki, T., Xu, M. C., & Jacobi, K. (2005). Molecular-beam-epitaxy grown InAs islands on nominal and vicinal GaAs(2511)A surfaces. Surface Science, 591(1-3), 117-132. doi:10.1016/j.susc.2005.06.026.


Zitierlink: https://hdl.handle.net/11858/00-001M-0000-0011-0747-B
Zusammenfassung
InAs was deposited onto nominal and vicinal (1.0 degrees-off-oriented) GaAs(2511)A surfaces by means of molecular beam epitaxy and studied by scanning tunneling microscopy and photoluminescence measurements. Both surfaces show step bunches along the [31 (1) over bar] direction which form fairly large (011) nano-facets. Large, inhomogeneously distributed InAs islands are formed on these nano-facets. The InAs islands exhibit a wide size distribution and vanishing photoluminescence intensity, both being characteristic for incoherent islands. The shape of the incoherent InAs islands is composed mainly of (111)A, (011), (001), and (317)A surfaces. During growth the latter undergoes a transition into the steeper (101) facet. The shape of the incoherent islands exhibits no symmetry in accordance with the missing of any symmetry at the GaAs(2511])A bulk-truncated substrate surface. On the flat terraces of the nominal GaAs(2511)A surface a second kind of QDs develops which are of the same shape but of a sharp size distribution. The photoluminescence intensity of the latter is quenched presumably by the coexistent incoherent InAs islands.