Strain effects on the electronic and optical properties of InAs/GaAs quantum 
dots: Tight-binding study

Santoprete, R.; Koiller, B.; Capaz, R. B.; Kratzer, Peter; Scheffler, Matthias

doi:10.1063/1.1994321

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Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study

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Kratzer, Peter
Theory, Fritz Haber Institute, Max Planck Society;

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Scheffler, Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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Santoprete, R., Koiller, B., Capaz, R. B., Kratzer, P., & Scheffler, M. (2005). Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In J. Menendez, & C. Van de Walle (Eds.), Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors (pp. 745-746). USA: American Institute of Physics.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-086E-F

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