InAs quantum dots on the GaAs(2¯5¯1¯1¯)B: STM and photoluminescence studies

Temko, Yevgeniy; Suzuki, Takayuki; Xu, Ming Chun; Pötschke, Konstantin; Bimberg, Dieter; Jacobi, Karl

doi:10.1103/PhysRevB.71.045336

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InAs quantum dots on the GaAs(2¯5¯1¯1¯)B: STM and photoluminescence studies

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Temko, Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Suzuki, Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Xu, Ming Chun
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi, Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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PhysRevB.71.045336.pdf
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引用

Temko, Y., Suzuki, T., Xu, M. C., Pötschke, K., Bimberg, D., & Jacobi, K. (2005). InAs quantum dots on the GaAs(2¯5¯1¯1¯)B: STM and photoluminescence studies. Physical Review B, 71(4), 045336–1-045336–11. doi:10.1103/PhysRevB.71.045336.

引用: https://hdl.handle.net/11858/00-001M-0000-0011-0999-5

要旨

The GaAs((2) over bar(5) over bar(1) over bar(1) over bar )B surface was prepared by molecular beam epitaxy and analyzed in situ by scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM images of GaAs((2) over bar(5) over bar(1) over bar(1) over bar )B revealed a 131 reconstruction, terminated by Ga dimers. The deposition of 1.5 ML of InAs onto GaAs((2) over bar(5) over bar(1) over bar(1) over bar )B resulted in the two- to three-dimensional transition with appearance of small InAs quantum dots (QD's) with a very narrow size distribution and a high number density. Low-index (0 (1) over bar(1) over bar), ((1) over bar0 (1) over bar), and ((1) over bar(1) over bar(1) over bar )B facets, a rounded vicinal (00 (1) over bar) region for the main part, and a high-index ((1) over bar(3) over bar(5) over bar )B surface for a flat base determine a shape of the QD's that is totally unsymmetrical. Ex situ-performed photoluminescence measurements revealed a peak of the InAs QD's onGaAs((2) over bar(5) over bar(1) over bar(1) over bar )B with a similar intensity to the peak from the InAs QD's on the reference GaAs(001) surface, but with a higher emission energy and a smaller linewidth, indicating an ensemble of QD's, smaller and more uniform in size. A small redshift (from 1.33 eV to 1.20 eV) of the emission energy was achieved by optimizing the preparation parameters.