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Lattice defects in InAs quantum dots on the GaAs(-3-1-5)B surface

MPS-Authors
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Suzuki,  Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Temko,  Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Xu,  Ming Chun
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Fulltext (public)

PhysRevB.69.235302.pdf
(Publisher version), 784KB

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Citation

Suzuki, T., Temko, Y., Xu, M. C., & Jacobi, K. (2004). Lattice defects in InAs quantum dots on the GaAs(-3-1-5)B surface. Physical Review B, 69(23), 235302–1-235302–6. doi:10.1103/PhysRevB.69.235302.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-0C60-9
Abstract
InAs quantum dots (QD's) grown by molecular-beam epitaxy on high-index GaAs(-3-1-5)B substrates were investigated by in situ scanning tunneling microscopy. The shape of the QD's is given by {110}, {111}, and {2 5 11}A bounding facets. The size distribution of the QD's is quite broad, with the length at the foot ranging from 15 to 85 nm. Stacking faults and screw dislocations penetrating the QD's are directly detected with atomic resolution at the QD facets. Many QD's exhibit signs of coalescence. It is concluded that the wide size distribution, the occurrence of lattice defects, and the tendency to coalesce are indicative of incoherent, nonluminescent dots.