English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse
  1. View item / 
  2. Item Summary

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Defect-induced gap states in Al2O3 thin films on NiAl(110)

MPS-Authors
/persons/resource/persons21916

Nilius,  Niklas
Chemical Physics, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21777

Kulawik,  Maria
Chemical Physics, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons22034

Rust,  Hans-Peter
Chemical Physics, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21524

Freund,  Hans-Joachim
Chemical Physics, Fritz Haber Institute, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)

PhysRevB.69.121401.pdf
(Publisher version), 545KB

Supplementary Material (public)
There is no public supplementary material available
Citation

Nilius, N., Kulawik, M., Rust, H.-P., & Freund, H.-J. (2004). Defect-induced gap states in Al2O3 thin films on NiAl(110). Physical Review B, 69, 121401–1-121401–4. doi:10.1103/PhysRevB.69.121401.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-0D3E-2
Abstract
The electronic properties of one-dimensional defects in ultrathin Al2O3 films have been investigated by low-temperature STM and STS. Whereas line defects between two oxide domains show almost no topographic contrast in low bias images, they appear with a distinct corrugation at higher positive sample bias. Conductance spectroscopy and imaging reveal three unoccupied states at +2.5, +3.0, and +4.5 V localized along the domain boundaries. The defect-induced states are responsible for the observed contrast variation and originate most likely from a nonstoichiometric oxide composition at the interface between two Al2O3 domains.