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Surface morphology and structure of the bare and InAs-covered GaAs(-3-1-5)B surface

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Suzuki,  Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Temko,  Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Xu,  Ming Chun
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Suzuki, T., Temko, Y., Xu, M. C., & Jacobi, K. (2004). Surface morphology and structure of the bare and InAs-covered GaAs(-3-1-5)B surface. Surface science: a journal devoted to the physics and chemistry of interfaces, 548(1-3), 333-341. doi:10.1016/j.susc.2003.11.011.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-0DD1-5
Abstract
Morphology and structure of the GaAs(-3 –1 -5)B surface were investigated under Ga- and As-rich conditions. On atomic scale the Ga-rich surface is not flat, but exhibits a very anisotropic surface morphology. Narrow stripes of 1 x 1 structure extend along [1 2 -1]. The steps between the stripes often bunch together thus creating (-1 0 -1) facets. The As-rich surface is also not flat, but facets into vicinal (-5 –2 –1 -1)B surfaces with steps along the [1 3 -1]proj. and [ 2 1]proj.. () facets form on the sidewall of the steps along the [1 3 -1]proj.. In adsorbing a monoatomic layer of InAs the GaAs(-3 –1 -5)B surface becomes flat, and exhibits a c(2 x 2) reconstruction.