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Journal Article

Shape of InAs quantum dots grown on the GaAs ((113)over-bar) B surface

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Suzuki,  Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Temko,  Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Suzuki, T., Temko, Y., & Jacobi, K. (2002). Shape of InAs quantum dots grown on the GaAs ((113)over-bar) B surface. Applied Physics Letters, 60(25), 4744-4746. doi:10.1063/1.1489087.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-1489-3
Abstract
Abstract: Self-organized InAs quantum dots were grown by molecular-beam epitaxy on the GaAs ((1) over bar(1) over bar(3) over bar) B surface. Atomically-resolved scanning tunneling microscopy images were acquired in situ. Each quantum dot grows with the same orientation relative to the substrate, with mirror symmetry to the ((1) over bar 10) plane perpendicular to the surface, and with its central part sitting on a flat base. The shape of the central part is given by {110} and ((1) over bar(1) over bar(1) over bar) B bounding facets and a not-further-resolved round region. High-index surfaces such as ((1) over bar(5) over bar(5) over bar) B, ((3) over bar(1) over bar(5) over bar) B, and probably ((1) over bar(1) over bar(2) over bar) B are derived for the base.