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Growth nuclei and surface defects on GaAs((1)over-bar(1)over-bar(3)over-bar)B

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Suzuki,  Takayuki
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Temko,  Yevgeniy
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Suzuki, T., Temko, Y., & Jacobi, K. (2002). Growth nuclei and surface defects on GaAs((1)over-bar(1)over-bar(3)over-bar)B. Surface Science, 511(1-3), 13-22. doi:10.1016/S0039-6028(02)01550-9.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-14C0-7
Abstract
Growth nuclei and surface defects are studied with scanning tunneling microscopy on the GaAs((1) over bar (1) over bar (3) over bar )13(8 x 1) surface prepared by molecular beam epitaxy. Besides steps, three types of distortions of the (8 x 1) reconstructed surface are found. First, there are growth nuclei formed by small cluster of Ga and As atoms. Second, there are zig-zigzag or zigzag-zag irregularities in the zigzag chains of the (8 x 1) reconstruction. Third, complete zigzag chains are added or removed. Based on the analysis of these surface defects, the epitaxial growth on the GaAs((1) over bar (1) over bar (3) over bar )B(8 x 1) surface is discussed.