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Atomic structure of the GaAs((113) over bar)B surface

MPS-Authors
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Márquez,  Juan
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Geelhaar,  Lutz
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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PhysRevB.65.165320.pdf
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Citation

Márquez, J., Geelhaar, L., & Jacobi, K. (2002). Atomic structure of the GaAs((113) over bar)B surface. Physical Review B, 65(16), 165320-1-165320-9. doi:10.1103/PhysRevB.65.165320.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-1534-6
Abstract
The GaAs((113) over bar)B surfaces were prepared by molecular-beam epitaxy and were in situ studied by low-energy electron diffraction and scanning tunnelling microscopy. We present results for two different surface structures, the recently observed (8x1) reconstruction and an As-rich structure. For the (8x1) reconstruction we confirm a model that consists of Ga dimer zigzag chains along [(33) over bar2] in two atomic levels. We report on the reflection high-energy electron diffraction (RHEED) during growth. RHEED oscillations are observed mainly with the electron beam along [(1) over bar 10] from which it is concluded that growth occurs through two-dimensional nucleation and propagates along [(33) over bar2]. The As-rich structure represents a remarkable case intermediate between a stable singular and an unstable facetted surface: Locally, As adatoms and dimers create a 1x and a 2x periodicity but long-range order does not exist; nevertheless, the surface comprises large terraces that are separated by well-developed steps.