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Adsorption and incorporation of silicon at GaN(0001) surfaces

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Rosa,  Andreia L.
Theory, Fritz Haber Institute, Max Planck Society;

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Neugebauer,  Jörg
Theory, Fritz Haber Institute, Max Planck Society;

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Rosa, A. L., Neugebauer, J., Northrup, J. E., Lee, C.-D., & Feenstra, R. M. (2002). Adsorption and incorporation of silicon at GaN(0001) surfaces. Applied Physics Letters, 80, 2008-2010. doi:10.1063/1.1452785.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-1692-C
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