Identification of surface anion antisite defects in (110) surfaces of III-V 
semiconductors

Ebert, Ph.; Quadbeck, P.; Urban, K.; Henninger, B.; Horn, Karsten; Schwarz, Günther; Neugebauer, Jörg; Scheffler, Matthias

doi:http://dx.doi.org/10.1063/1.1408906

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Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors

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Henninger, B.
Theory, Fritz Haber Institute, Max Planck Society;

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Horn, Karsten
Fritz Haber Institute, Max Planck Society;

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Schwarz, Günther
Theory, Fritz Haber Institute, Max Planck Society;

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Neugebauer, Jörg
Theory, Fritz Haber Institute, Max Planck Society;

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Scheffler, Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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Ebert, P., Quadbeck, P., Urban, K., Henninger, B., Horn, K., Schwarz, G., et al. (2001). Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors. Applied Physics Letters, 79(18), 2877-2879. doi:http://dx.doi.org/10.1063/1.1408906.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-191A-4

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