Transmission electron microscopical studies of the layered structure of the 
ternary semiconductor CuIn5Se8

Tham, Anh Tuan; Su, Dang Sheng; Neumann, Wolfgang; Schubert-Bischoff, Peter; Beilharz, C.; Benz, K. W.

doi:10.1002/1521-4079(200103)36:3<303::AID-CRAT303>3.0.CO;2-x

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Transmission electron microscopical studies of the layered structure of the ternary semiconductor CuIn₅Se₈

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Tham, Anh Tuan
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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Su, Dang Sheng
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Tham, A. T., Su, D. S., Neumann, W., Schubert-Bischoff, P., Beilharz, C., & Benz, K. W. (2001). Transmission electron microscopical studies of the layered structure of the ternary semiconductor CuIn₅Se₈. Crystal Research and Technology, 36(3), 303-308. doi:10.1002/1521-4079(200103)36:3<303:AID-CRAT303>3.0.CO;2-x.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-19C0-A

Abstract

The structure of the off-stoichiometric In-rich ternary phase CuIn₅Se₈ was studied by means of electron diffraction and high-resolution electron microscopy. The compound shows a layered structure with a 7-layer stacking sequence of closed-packed planes, which contains both cubic and hexagonal stacking of Se atoms. The studied CuIn₅Se₈ bulk crystal is known as the b-phase of this compound.