Flat conduction-band alignment at the CdS/CuInSe2 thin-film solar-cell 
heterojunction

Morkel, Matthias; Weinhardt, L.; Lohmuller, B.; Heske, Clement; Umbach, Eberhard; Riedl, W.; Zweigart, S.; Karg, F.

doi:10.1063/1.1428408

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Flat conduction-band alignment at the CdS/CuInSe₂ thin-film solar-cell heterojunction

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Morkel, Matthias
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Citation

Morkel, M., Weinhardt, L., Lohmuller, B., Heske, C., Umbach, E., Riedl, W., et al. (2001). Flat conduction-band alignment at the CdS/CuInSe₂ thin-film solar-cell heterojunction. Applied Physics Letters, 79(27), 4482-4484. doi:10.1063/1.1428408.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-19D9-3

Abstract

By combining ultraviolet and x-ray photoelectron spectroscopy with inverse photoemission spectroscopy, we find that the conduction-band alignment at the CdS/CuInSe2 thin-film solar- cell heterojunction is flat (0.0+/-0.2 eV). Furthermore, we observe a valence-band offset of 0.8+/-0.2 eV. The electronic level alignment is dominated by (1) an unusually large surface band gap of the CuInSe2 thin film (1.4 eV), (2) by a reduced surface band gap of the CdS overlayer (2.2 eV) due to intermixing effects, and (3) by a general influence of the intermixing on the chemical state near the interface.