GaAs(001) surface under conditions of low As pressure: Evidence for a novel 
surface geometry

Lee, Sung-Hong; Moritz, W.; Scheffler, Matthias

doi:10.1103/PhysRevLett.85.3890

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GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry

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Scheffler, Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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PRL-85-3890-2000.pdf
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引用

Lee, S.-H., Moritz, W., & Scheffler, M. (2000). GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry. Physical Review Letters, 85(18), 3890-3893. doi:10.1103/PhysRevLett.85.3890.

引用: https://hdl.handle.net/11858/00-001M-0000-0011-1BDF-9

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