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Book Chapter

Hydrogen and acceptor compensation in GaN

MPS-Authors

Van de Walle,  Chris G.
Max Planck Society;

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Neugebauer,  Jörg
Theory, Fritz Haber Institute, Max Planck Society;

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Citation

Van de Walle, C. G., Johnson, N. M., & Neugebauer, J. (1999). Hydrogen and acceptor compensation in GaN. In S. Strite, I. Akasaki, H. Amano, & C. Wetzel (Eds.), Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (pp. 317-321). INSPEC.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-1D8D-6
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