English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Book Chapter

Hydrogen and acceptor compensation in GaN

MPS-Authors

Van de Walle,  Chris G.
Max Planck Society;

/persons/resource/persons125293

Neugebauer,  Jörg
Theory, Fritz Haber Institute, Max Planck Society;

External Ressource
No external resources are shared
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Van de Walle, C. G., Johnson, N. M., & Neugebauer, J. (1999). Hydrogen and acceptor compensation in GaN. In S. Strite, I. Akasaki, H. Amano, & C. Wetzel (Eds.), Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (pp. 317-321). INSPEC.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-1D8D-6
Abstract
There is no abstract available