Indium induced changes in GaN(0001) surface morphology

Northrup, J. E.; Neugebauer, Jörg

doi:10.1103/PhysRevB.60.R8473

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Indium induced changes in GaN(0001) surface morphology

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Neugebauer, Jörg
Theory, Fritz Haber Institute, Max Planck Society;

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Northrup, J. E., & Neugebauer, J. (1999). Indium induced changes in GaN(0001) surface morphology. Physical Review B, 60(12), R8473-R8476. doi:10.1103/PhysRevB.60.R8473.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-1DC8-F

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