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Theory of doping and defects in III-V nitrides

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Neugebauer,  Jörg
Theory, Fritz Haber Institute, Max Planck Society;

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Van de Walle, C. G., Stampfl, C., & Neugebauer, J. (1998). Theory of doping and defects in III-V nitrides. Journal of Crystal Growth, 189/190, 505-510. doi:10.1016/S0022-0248(98)00340-6.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0011-1EC5-D
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