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Conference Paper

Role of defects and impurities in doping of GaN

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Neugebauer,  Jörg
Theory, Fritz Haber Institute, Max Planck Society;

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Neugebauer, J., & Van de Walle, C. G. (1996). Role of defects and impurities in doping of GaN. In M. Scheffler (Ed.), 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings] (pp. 2849-2856). Singapore: World Scientific.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-1FDF-B
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