Probing by in situ scanning tunneling microscopy the influence of an organic 
additive on Si etching in NaOH

Allongue, Philippe; Bertagna, Valérie; Kieling, Virginia; Gerischer, Heinz

doi:10.1116/1.587281

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Probing by in situ scanning tunneling microscopy the influence of an organic additive on Si etching in NaOH

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Gerischer, Heinz
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Allongue, P., Bertagna, V., Kieling, V., & Gerischer, H. (1994). Probing by in situ scanning tunneling microscopy the influence of an organic additive on Si etching in NaOH. Journal of Vacuum Science & Technology B, 12(3), 1539-1542. doi:10.1116/1.587281.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-20D2-D

Abstract

The etching of Si in alkaline solution is used to fabricate microstructures. A recent study has described the etching reaction at a molecular level. The present paper studies, with in situ scanning tunneling microscopy, the effect of a surfactant (triton) on Si etching and its consequences regarding the resulting surface topography, which is an important question in the preparation of substrates.