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Journal Article

The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces

MPS-Authors
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Methfessel,  Michael
Theory, Fritz Haber Institute, Max Planck Society;

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Scheffler,  Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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Methfessel, M., Agrawal, B. K., & Scheffler, M. (1990). The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), 989-992.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-22CF-9
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