Tractable approach for calculating lattice distortions around simple defects in 
semiconductors: Application to the single donor Ge in GaP

Scheffler, M.; Vigneron, J. P.; Bachelet, G. B.

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Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP

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Scheffler, M.
Theory, Fritz Haber Institute, Max Planck Society;

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Scheffler, M., Vigneron, J. P., & Bachelet, G. B. (1982). Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters, 49, 1765-1768.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-2379-E

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