Ab Initio Investigation about the Possibility of Ferromagnetism Induced by 
Boron Vacancy in BN Nanotubes

Liu, Rui; Li, Jia; Zhou, Gang

doi:10.1021/jp911623m

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Ab Initio Investigation about the Possibility of Ferromagnetism Induced by Boron Vacancy in BN Nanotubes

MPS-Authors

/persons/resource/persons21805

Li, Jia
Department of Physics, Tsinghua University;
Theory, Fritz Haber Institute, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Liu, R., Li, J., & Zhou, G. (2010). Ab Initio Investigation about the Possibility of Ferromagnetism Induced by Boron Vacancy in BN Nanotubes. The Journal of Physical Chemistry C, 114, 4357-4361. doi:10.1021/jp911623m.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-2A53-8

Abstract

We study structural deformation, electronic states, and intrinsic magnetism induced by the cation vacancy (VB) in boron nitride nanotubes (BNNTs), in comparison with the BN sheet, using spin-polarized density functional theory. Two types of vacancy configurations are observed in tubes, depending on the nature of the vacancy and the local stress. The underlying formation mechanisms are discussed from the viewpoint of the electronic and geometrical (or stress-induced) effects. Under additional stress, the VB prefers the open configuration to the closed 5-1DB configuration, showing different properties and potential applications. Due to the strong localization, the magnetic interaction between the VB-induced moments is short-range along either the axis or the circumference, meaning the ferromagnetism is difficult to be present. The simulation of negative charge injection implies VB-defective BNNTs might be promising candidates for spin-transport devices. In addition, the effects of surrounding H and F atoms on the spin-polarized states and magnetism of defective BNNTs are also explored