Carrier-wave Rabi flopping: role of the carrier-envelope phase

Mücke, O. D.; Tritschler, T.; Wegener, M.; Morgner, U.; Kärtner, F. X.; Khitrova, G.; Gibbs, H. M.

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Carrier-wave Rabi flopping: role of the carrier-envelope phase

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Morgner, U.
Division Prof. Dr. Joachim H. Ullrich, MPI for Nuclear Physics, Max Planck Society;

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Citation

Mücke, O. D., Tritschler, T., Wegener, M., Morgner, U., Kärtner, F. X., Khitrova, G., et al. (2004). Carrier-wave Rabi flopping: role of the carrier-envelope phase. Optics Letters, 29(18), 2160-2162.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-8B58-F

Abstract

Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.