Defect induced charge transfer losses in high resistivity float zone silicon 
charge coupled devices

Soltau, H.; Krause, N.; Meidinger, N.; Hauff, D.; Krisch, S.; Strüder, L.; Zanthier, C. von

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Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices

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Soltau, H.
High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society;

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Krause, N.
Infrared and Submillimeter Astronomy, MPI for Extraterrestrial Physics, Max Planck Society;

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Meidinger, N.
High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society;

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Hauff, D.
High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society;

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Krisch, S.
High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society;

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Strüder, L.
High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society;

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Zanthier, C. von
High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society;

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Soltau, H., Krause, N., Meidinger, N., Hauff, D., Krisch, S., Strüder, L., et al. (1996). Defect induced charge transfer losses in high resistivity float zone silicon charge coupled devices. In C. Claeys (Ed.), Proceedings of the 4th International Symposium on High Purity Silicon (pp. 325-337). Electrochemical Society.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-ED52-3

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