Controllable quantum scars in semiconductor quantum dots

Keski-Rahkonen, J.; Luukko, Perttu J. J.; Kaplan, L.; Heller, E. J.; Rasanen, E.

doi:10.1103/PhysRevB.96.094204

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Controllable quantum scars in semiconductor quantum dots

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Luukko, Perttu J. J.
Max Planck Institute for the Physics of Complex Systems, Max Planck Society;

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https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.094204
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Citation

Keski-Rahkonen, J., Luukko, P. J. J., Kaplan, L., Heller, E. J., & Rasanen, E. (2017). Controllable quantum scars in semiconductor quantum dots. Physical Review B, 96(9): 094204. doi:10.1103/PhysRevB.96.094204.

Cite as: https://hdl.handle.net/11858/00-001M-0000-002E-2CCB-C

Abstract

Quantum scars are enhancements of quantum probability density along classical periodic orbits. We study the recently discovered phenomenon of strong perturbation-induced quantum scarring in the two-dimensional harmonic oscillator exposed to a homogeneous magnetic field. We demonstrate that both the geometry and the orientation of the scars are fully controllable with a magnetic field and a focused perturbative potential, respectively. These properties may open a path into an experimental scheme to manipulate electric currents in nanostructures fabricated in a two-dimensional electron gas.