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Journal Article

Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films

MPS-Authors
/persons/resource/persons185584

Paßler,  Nikolai
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons182542

Razdolski,  Ilya
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons22250

Wolf,  Martin
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21937

Paarmann,  Alexander
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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1811.10370.pdf
(Preprint), 4MB

acsphotonics.9b00290.pdf
(Publisher version), 2MB

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Citation

Paßler, N., Razdolski, I., Katzer, D. S., Storm, D. F., Caldwell, J. D., Wolf, M., et al. (2019). Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films. ACS Photonics, 6(6), 1365-1371. doi:10.1021/acsphotonics.9b00290.


Cite as: https://hdl.handle.net/21.11116/0000-0002-99CE-A
Abstract
Immense optical field enhancement was predicted to occur for the Berreman mode in ultrathin films at frequencies in the vicinity of epsilon-near-zero (ENZ). Here, we report the first experimental proof of this prediction in the mid-infrared by probing the resonantly enhanced second harmonic generation (SHG) at the longitudinal optic phonon frequency from a deeply subwavelength-thin aluminum nitride (AlN) film. Employing a transfer matrix formalism, we show that the field enhancement is completely localized inside the AlN layer, revealing that the observed SHG signal of the Berreman mode is solely generated in the AlN film. Our results demonstrate that ENZ Berreman modes in intrinsically low-loss polar dielectric crystals constitute a promising platform for nonlinear nanophotonic applications.