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pdf:docinfo:title: Step-flow growth in homoepitaxy of ?-Ga2O3 (100)?The influence of the miscut direction and faceting
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dc:title: Step-flow growth in homoepitaxy of ?-Ga2O3 (100)?The influence of the miscut direction and faceting
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Author: R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. Albrecht
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Keywords: annealing,atomic force microscopy,density functional theory,electron density,electron mobility,energy gap,gallium compounds,MOCVD,monolayers,scanning-transmission electron microscopy,semiconductor epitaxial layers,solid-state phase transformations,stoichiometry,substrates,surface energy,surface morphology,twinning,vapour phase epitaxial growth,wide band gap semiconductors
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dc:creator: R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, and M. Albrecht
description: APL Materials 2019.7:022515
dcterms:created: 2018-12-18T00:21:09Z
Last-Modified: 2019-04-15T08:33:48Z
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title: Step-flow growth in homoepitaxy of ?-Ga2O3 (100)?The influence of the miscut direction and faceting
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dc:subject: annealing,atomic force microscopy,density functional theory,electron density,electron mobility,energy gap,gallium compounds,MOCVD,monolayers,scanning-transmission electron microscopy,semiconductor epitaxial layers,solid-state phase transformations,stoichiometry,substrates,surface energy,surface morphology,twinning,vapour phase epitaxial growth,wide band gap semiconductors
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