Reflection high-energy electron diffraction and 119sn mössbauer investigation 
of epitaxial α-sn films

Roldan Cuenya, Beatriz; Doi, M.; Marks, O; Keune, W.; Mibu, K.

doi:10.1142/9789812793652_0024

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Reflection high-energy electron diffraction and ¹¹⁹sn mössbauer investigation of epitaxial α-sn films

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Citation

Roldan Cuenya, B., Doi, M., Marks, O., Keune, W., & Mibu, K. (2000). Reflection high-energy electron diffraction and ¹¹⁹sn mössbauer investigation of epitaxial α-sn films. In P. Entel, & D. E. Wolf (Eds.), Structure and Dynamics of Heterogeneous Systems (pp. 251-262). Singapore: World Scientific.

Cite as: https://hdl.handle.net/21.11116/0000-0006-EC1D-1

Abstract

Structure and growth of epitaxial Sn films on InSb(001), Cu(001) and fcc-Fe/Cu(001) substrates were investigated by reflection high-energy electron diffraction (RHEED) and ¹¹⁹Sn Mössbauer spectroscopy. The Sn films grow epitaxially in the α-Sn(001) phase up to 1100 Å thickness on InSb, up to 5.5 ML on Cu(001), and up to 2.7 ML on fcc-Fe/Cu(001). Various surface reconstructions as a function of Sn coverage have been observed. The in-plane lattice parameter of the α-Sn overlayer was studied as a function of coverage.