date: 2020-10-13T09:47:59Z pdf:unmappedUnicodeCharsPerPage: 0 pdf:PDFVersion: 1.4 pdf:docinfo:title: The growth of bismuth and antimony overlayers on InP(110) access_permission:modify_annotations: true access_permission:can_print_degraded: true subject: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 1990.8:674-679 dc:creator: D. R. T. Zahn dcterms:created: 2000-11-14T13:53:12Z Last-Modified: 2020-10-13T09:47:59Z dcterms:modified: 2020-10-13T09:47:59Z dc:format: application/pdf; version=1.4 title: The growth of bismuth and antimony overlayers on InP(110) xmpMM:DocumentID: uuid:da84975d-62cf-4643-8afd-2104c7a78a75 Last-Save-Date: 2020-10-13T09:47:59Z access_permission:fill_in_form: true pdf:docinfo:custom:CreationDate--Text: Tue Nov 14 13:53:12 2000 pdf:docinfo:modified: 2020-10-13T09:47:59Z meta:save-date: 2020-10-13T09:47:59Z pdf:encrypted: false dc:title: The growth of bismuth and antimony overlayers on InP(110) modified: 2020-10-13T09:47:59Z cp:subject: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 1990.8:674-679 pdf:docinfo:subject: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 1990.8:674-679 Content-Type: application/pdf pdf:docinfo:creator: C. Stephens X-Parsed-By: org.apache.tika.parser.DefaultParser creator: D. R. T. Zahn meta:author: D. R. T. Zahn meta:creation-date: 2000-11-14T13:53:12Z created: 2000-11-14T13:53:12Z access_permission:extract_for_accessibility: true access_permission:assemble_document: true xmpTPg:NPages: 7 Creation-Date: 2000-11-14T13:53:12Z pdf:charsPerPage: 415 access_permission:extract_content: true access_permission:can_print: true Author: D. R. T. Zahn producer: iText 4.2.0 by 1T3XT access_permission:can_modify: true pdf:docinfo:producer: iText 4.2.0 by 1T3XT pdf:docinfo:created: 2000-11-14T13:53:12Z CreationDate--Text: Tue Nov 14 13:53:12 2000