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Journal Article

Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

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Morales-Inostroza,  Luis
Sandoghdar Division, Max Planck Institute for the Science of Light, Max Planck Society;

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Götzinger,  Stephan
Sandoghdar Division, Max Planck Institute for the Science of Light, Max Planck Society;
Department of Physics, Friedrich Alexander University Erlangen-Nuremberg (FAU);
Graduate School in Advanced Optical Technologies (SAOT), Friedrich Alexander University Erlangen-Nuremberg (FAU);
Sandoghdar Division, Max-Planck-Zentrum für Physik und Medizin, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Mendelson, N., Morales-Inostroza, L., Li, C., Ritika, R., Nguyen, M. A. P., Loyola-Echeverria, J., et al. (2020). Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride. Advanced Optical Materials. doi:10.1002/adom.202001271.


Cite as: https://hdl.handle.net/21.11116/0000-0007-6694-F
Abstract
Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate is studied. Combining a range of characterization techniques, it is demonstrated that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. These emitters are further utilized and integrated with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ≈2.9 × 106 cps and an average photon purity of g(2)(0) ≈ 0.1. The results advance the understanding of single photon emitter incorporation during chemical vapor deposition growth and demonstrate a key step towards compact devices for achieving maximum collection efficiency.