Backside-processed III-V-on-silicon discrete mode laser

Thiessen, Torrey; Fonseca, Jérémy Da; Mak, Jason C. C.; Zammar, Georgio El; Jany, Christophe; Szelag, Bertrand; Poon, Joyce K. S.; Menezo, Sylvie

doi:10.1364/CLEO_AT.2019.JTh5A.1

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Backside-processed III-V-on-silicon discrete mode laser

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Poon, Joyce K. S.
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1364/CLEO_AT.2019.JTh5A.1
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Citation

Thiessen, T., Fonseca, J. D., Mak, J. C. C., Zammar, G. E., Jany, C., Szelag, B., et al. (2019). Backside-processed III-V-on-silicon discrete mode laser. In CLEO: Science and Innovations 2019. doi:10.1364/CLEO_AT.2019.JTh5A.1.

Cite as: https://hdl.handle.net/21.11116/0000-0008-2274-F

Abstract

We demonstrate the first backside-processed hybrid silicon discrete mode laser. It operates in the O-band with a total waveguide-coupled output power >43 mW, 850 kHz linewidth, and a side mode suppression ratio of 60 dB.