og:image: https://pubs.acs.org/na101/home/literatum/publisher/achs/journals/content/nalefd/2020/nalefd.2020.20.issue-9/acs.nanolett.0c02357/20200901/images/large/nl0c02357_0006.jpeg twitter:card: summary_large_image Description: Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical an... keywords: tin selenide,monolayer,2D ferroelectric,scanning tunneling microscopy,molecular beam epitaxy citation_journal_title: Nano Letters dc.Title: Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature dc.Identifier: 10.1021/acs.nanolett.0c02357 title: Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature | Nano Letters og:description: Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications. pbContext: ;requestedJournal:journal:nalefd;page:string:Article/Chapter View;ctype:string:Journal Content;journal:journal:nalefd;wgroup:string:ACHS website Group;article:article:10.1021/acs.nanolett.0c02357;issue:issue:10.1021/nalefd.2020.20.issue-9;website:website:acspubs;pageGroup:string:Publication Pages;subPage:string:Full Text twitter:image: https://pubs.acs.org/na101/home/literatum/publisher/achs/journals/content/nalefd/2020/nalefd.2020.20.issue-9/acs.nanolett.0c02357/20200901/images/large/nl0c02357_0006.jpeg dc.Publisher: American Chemical Society twitter:site: @ACSPublications dc.Format: text/HTML dc.Rights: Copyright © 2020 American Chemical Society dc:title: Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature | Nano Letters Content-Encoding: UTF-8 Content-Type-Hint: text/html; charset=UTF-8 dc.Date: August 18, 2020 robots: noarchive dc.Subject: tin selenide; monolayer; 2D ferroelectric; scanning tunneling microscopy; molecular beam epitaxy Content-Type: text/html; charset=UTF-8 citation_fulltext_world_readable: X-Parsed-By: org.apache.tika.parser.DefaultParser twitter:title: Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature og:type: Article google-site-verification: uBHpu2M2kL7VihPCSRXWyBSxooDf7L_BGgfHA3cjSfY dc.Type: rapid-communication og:title: Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature X-UA-Compatible: IE=edge dc.Language: en dc.Description: Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical an... viewport: width=device-width,initial-scale=1,maximum-scale=10, user-scalable=0 twitter:description: Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications. dc.Creator: Kai Chang dc.identifier: 10.1021/acs.nanolett.0c02357 dc.Coverage: world og:url: https://pubs.acs.org/doi/full/10.1021/acs.nanolett.0c02357 Content-Language: en format-detection: telephone=no