First principles design of Ohmic spin diodes based on quaternary Heusler 
compounds

Aull, T.; Şaşıoğlu, E.; Mertig, I.

doi:10.1063/5.0037085

アイテム詳細

登録内容を編集ファイル形式で保存

一時保存へ追加

タグ情報を表示リリース履歴を表示詳細要約

公開

学術論文

First principles design of Ohmic spin diodes based on quaternary Heusler compounds

MPS-Authors

Mertig, I.
Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1063/5.0037085
(出版社版)

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

フルテキスト (公開)

公開されているフルテキストはありません

付随資料 (公開)

There is no public supplementary material available

引用

Aull, T., Şaşıoğlu, E., & Mertig, I. (2021). First principles design of Ohmic spin diodes based on quaternary Heusler compounds. Applied Physics Letters, 118(5):. doi:10.1063/5.0037085.

引用: https://hdl.handle.net/21.11116/0000-0008-6685-F

要旨

The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the nonequilibrium Green's function method, we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage (I-V) characteristics with zero threshold voltage V_T. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between 30 and 10⁵. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds.