Geometric and electronic structure of molecular beam epitaxy-prepared GaAs 
(112) and (113) surfaces

Platen, Jutta; Setzer, Carsten; Geng, Peter; Ranke, Wolfgang; Jacobi, Karl

doi:10.1016/S0026-2692(96)00136-X

Item

ITEM ACTIONSEXPORT

Add to Basket

Please note that a newer version of this item is available:
https://pure.mpg.de/pubman/item/item_3325033_2

DetailsSummary

Released

Journal Article

Geometric and electronic structure of molecular beam epitaxy-prepared GaAs (112) and (113) surfaces

MPS-Authors

/persons/resource/persons250890

Platen, Jutta
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons22105

Setzer, Carsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21544

Geng, Peter
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21990

Ranke, Wolfgang
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21665

Jacobi, Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Platen, J., Setzer, C., Geng, P., Ranke, W., & Jacobi, K. (1997). Geometric and electronic structure of molecular beam epitaxy-prepared GaAs (112) and (113) surfaces. Microelectronics Journal, 28(8-10), 969-976. doi:10.1016/S0026-2692(96)00136-X.

Cite as: https://hdl.handle.net/21.11116/0000-0008-B4C7-C

Abstract

The surface structure and the electronic properties of the high-index molecular beam epitaxy (MBE)-prepared GaAs surfaces (112)A and B as well as (113)A and B were investigated in situ by low-energy electron diffraction and surface core level spectroscopy. Under MBE conditions, both (112) surfaces are unstable. The (112)A surface consists of five kinds of facets with the orientations {110}, {124} and (111). The (̅1̅1̅2)B surface forms four types of facets with the orientations (̅1̅1̅1), (̅1̅1̅3) and {̅1̅1̅0}. The surface core-level shift analysis on GaAs(112)A yields surface components for the As 3d peak (−0.31eV) as well as for the Ga 3d peak (+0.28eV). On GaAs(113)A both the (8×1) superstructure and the core-level analysis support a structure model proposed recently by Wassermeier et al. (Phys. Rev. B, 57. (1995) 14721). After MBE preparation, the (̅1̅1̅3)B surface forms facets with the orientations (̅1̅1̅0) and (̅1̅1̅1).