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Floquet Engineering of Magnetism in Topological Insulator Thin Films

MPG-Autoren

Liu,  X.
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University;
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;

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Tang,  P.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;

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Hübener,  H.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;

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de Giovannini,  U.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;

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Rubio,  A.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;
Nano-Bio Spectroscopy Group, Departamento de Fisica de Materiales, Universidad del Paìs Vasco UPV/EHU;
Center for Computational Quantum Physics, Flatiron Institute;

Externe Ressourcen

https://arxiv.org/abs/2106.06977
(Preprint)

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Volltexte (frei zugänglich)

2106.06977.pdf
(Preprint), 2MB

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Zitation

Liu, X., Tang, P., Hübener, H., de Giovannini, U., Duan, W., & Rubio, A. (2021). Floquet Engineering of Magnetism in Topological Insulator Thin Films.


Zitierlink: https://hdl.handle.net/21.11116/0000-0008-B312-9
Zusammenfassung
Dynamic manipulation of magnetism in topological materials is demonstrated here via a Floquet engineering approach using circularly polarized light. Increasing the strength of the laser field, besides the expected topological phase transition, the magnetically doped topological insulator thin film also undergoes a magnetic phase transition from ferromagnetism to paramagnetism, whose critical behavior strongly depends on the quantum quenching. In sharp contrast to the equilibrium case, the non-equilibrium Curie temperatures vary for different time scale and experimental setup, not all relying on change of topology. Our discoveries deepen the understanding of the relationship between topology and magnetism in the non-equilibrium regime and extend optoelectronic device applications to topological materials.