Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with 
improvedresponsivity and specific detectivity at 1,550 nm

Son, Bongkwon; Zhou, Hao; Lin, Yiding; Lee, Kwang Hong; Tan, Chuan Seng

doi:10.1364/OE.422931

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Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improvedresponsivity and specific detectivity at 1,550 nm

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Lin, Yiding
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1364/OE.422931
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Citation

Son, B., Zhou, H., Lin, Y., Lee, K. H., & Tan, C. S. (2021). Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improvedresponsivity and specific detectivity at 1,550 nm. Optics Express, 29(11), 16520-16533. doi:10.1364/OE.422931.

Cite as: https://hdl.handle.net/21.11116/0000-0008-B79A-C

Abstract

Gourd-shaped hole array germanium (Ge) vertical p-i-n photodiodes were designed and demonstrated on a germanium-on-insulator (GOI) substrate with the excellent responsivity of 0.74 A/W and specific detectivity of 3.1 × 10¹⁰ cm·Hz^1/2/W. It is calculated that the gourd-shaped hole design provides a higher optical absorption compared to a cylinder-shaped hole design. As a result, the external quantum efficiency for the gourd-shaped hole array photodetector was enhanced by ∼2.5× at 1,550 nm, comparing with hole-free array photodetectors. In addition, the extracted specific detectivity is superior to that of commercial bulk Ge photodiodes. The 3-dB bandwidth for the hole array photodetectors is improved by ∼10% due to a lower device capacitance. This work paves the way for low-cost and high-performance CMOS compatible photodetectors for Si-based photonic-integrated circuits.