Investigation of the Sn/GaP(110) interface by core level photoemission: 
interface reaction, growth morphology and surface photovoltage effects

Chassé, T.; Neuhold, G.; Paggel, Jens; Horn, Karsten

doi:10.1016/S0169-4332(97)00111-6

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Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects

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Paggel, Jens
Fritz Haber Institute, Max Planck Society;

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Horn, Karsten
Fritz Haber Institute, Max Planck Society;

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Citation

Chassé, T., Neuhold, G., Paggel, J., & Horn, K. (1997). Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects. Applied Surface Science, 115(4), 326-335. doi:10.1016/S0169-4332(97)00111-6.

Cite as: https://hdl.handle.net/21.11116/0000-0008-BB51-A

Abstract

Interface reaction, morphology and electronic properties of the Sn/GaP(110) interface have been studied using photoelectron spectroscopy, LEED and SEM. A weak reaction has been observed by photoemission, which was confined to just the interface bonds. The growth of the tin film proceeds by the Stranski-Krastanov mode. On an about two monolayer thick, ordered layer of tin 3D islands grow, which exhibit metallic properties. Surface photovoltage effects including significant flux dependence have been observed up to such high nominal coverages as 100 nm. They have been used to predict the semiconducting nature of the initial tin wetting layer.