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Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1¯1¯3¯)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing

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Setzer,  Carsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Platen,  Jutta
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Ranke,  Wolfgang
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Setzer, C., Platen, J., Ranke, W., & Jacobi, K. (1999). Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1¯1¯3¯)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing. Surface Science, 419(2-3), 291-302. doi:10.1016/S0039-6028(98)00807-3.


Cite as: https://hdl.handle.net/21.11116/0000-0008-F37F-8
Abstract
The GaAs (113)A and (1¯1¯3¯)B surfaces were prepared by molecular beam epitaxy (MBE) and ion bombardment and annealing (IBA). The surfaces were investigated in situ by means of low-energy electron diffraction and surface core-level (SCL) spectroscopy. Both orientations show 1×1 reconstructions after preparation with IBA. For the (113)A face a stable, 8×1 reconstructed surface was prepared by MBE. SCL shifts (SCLSs) are observed for As 3d (+0.53 eV) and Ga 3d (−0.46, +0.36 eV) which support a recently proposed model by Wassermeier et al. [Phys. Rev. B 51 (1995) 14721]. The (113)A(8×1) surface exhibits surface resonances at −1.0 and −3.8 eV below the valence band maximum. The dispersion of these resonances is only weak and does not follow the symmetry of the reconstructed surface. The (1¯1¯3¯)B surface shows {1¯1¯1¯} and {110} facets after preparation with MBE. This is confirmed by SCLSs for As 3d (−0.63, +0.57 eV).