Suppression of ferromagnetism and influence of disorder in silicon-substituted 
CeRh6Ge4

Zhang, Y. J.; Nie, Z. Y.; Li, R.; Li, Y. C.; Yang, D. L.; Shen, B.; Chen, Y.; Du, F.; Luo, S. S.; Su, H.; Shi, R.; Wang, S. Y.; Nicklas, M.; Steglich, F.; Smidman, M.; Yuan, H. Q.

doi:10.1103/PhysRevB.106.054409

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Suppression of ferromagnetism and influence of disorder in silicon-substituted CeRh₆Ge₄

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Nicklas, M.
Michael Nicklas, Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Steglich, F.
Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Zhang, Y. J., Nie, Z. Y., Li, R., Li, Y. C., Yang, D. L., Shen, B., et al. (2022). Suppression of ferromagnetism and influence of disorder in silicon-substituted CeRh₆Ge₄. Physical Review B, 106(5): 054409, pp. 1-7. doi:10.1103/PhysRevB.106.054409.

Cite as: https://hdl.handle.net/21.11116/0000-000A-FC29-D

Abstract

We report a study of isoelectronic chemical substitution in the recently discovered quantum critical ferromagnet CeRh6Ge4. Upon silicon doping, the ferromagnetic ordering temperature of CeRh6(Ge1-xSix)4 is continuously suppressed, and no transition is observed beyond xc≈0.125. Non-Fermi-liquid behavior with C/T ln(T∗/T) is observed close to xc, indicating the existence of strong quantum fluctuations, while the T-linear behavior observed upon pressurizing the parent compound is absent in the resistivity, which is likely a consequence of the disorder induced by silicon doping. Our findings show the effects of disorder on the unusual ferromagnetic quantum criticality in CeRh6Ge4, and provide further evidence for understanding the origin of this behavior. © 2022 American Physical Society.