Chemical passivation of 2D transition metal dichalcogenides: strategies, 
mechanisms, and prospects for optoelectronic applications

Li, Z.; Bretscher, H.; Rao, A.

doi:10.1039/D3NR06296A

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Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications

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Bretscher, H.
Ultrafast Transport in Quantum Materials, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;

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https://arxiv.org/abs/2301.06925
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https://doi.org/10.1039/D3NR06296A
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引用

Li, Z., Bretscher, H., & Rao, A. (2024). Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications. Nanoscale, 16(20), 9728-9741. doi:10.1039/D3NR06296A.

引用: https://hdl.handle.net/21.11116/0000-000C-93AF-9

要旨

The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.