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Perovskite substrates boost the thermopower of cobaltate thin films at high temperatures

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Yordanov,  P.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;

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Wochner,  P.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Gregori,  G.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Maier,  J.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Keimer,  B.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Habermeier,  H.-U.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society;
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Yordanov, P., Wochner, P., Ibrahimkutty, S., Dietl, C., Wrobel, F., Felici, R., et al. (2017). Perovskite substrates boost the thermopower of cobaltate thin films at high temperatures. Applied Physics Letters, 110(25): 253101.


Cite as: https://hdl.handle.net/21.11116/0000-000E-D0BC-3
Abstract
Transition metal oxides are promising candidates for thermoelectric applications, because they are stable at high temperature and because strong electronic correlations can generate large Seebeck coefficients, but their thermoelectric power factors are limited by the low electrical conductivity. We report transport measurements on Ca3Co4O9 films on various perovskite substrates and show that reversible incorporation of oxygen into SrTiO3 and LaAlO3 substrates activates a parallel conduction channel for p-type carriers, greatly enhancing the thermoelectric performance of the film-substrate system at temperatures above 450 degrees C. Thin-film structures that take advantage of both electronic correlations and the high oxygen mobility of transition metal oxides thus open up new perspectives for thermopower generation at high temperature. Published by AIP Publishing.