Uniaxial stress effect on the electronic structure of quantum materials

Jo, Na Hyun; Gati, Elena; Pfau, Heike

doi:10.3389/femat.2024.1392760

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Uniaxial stress effect on the electronic structure of quantum materials

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Gati, Elena
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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引用

Jo, N. H., Gati, E., & Pfau, H. (2024). Uniaxial stress effect on the electronic structure of quantum materials. Frontiers in Electronic Materials, 4:, pp. 1-16. doi:10.3389/femat.2024.1392760.

引用: https://hdl.handle.net/21.11116/0000-000F-6AE7-6

要旨

Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe₂, the unconventional superconductor Sr₂RuO₄, Fe-based superconductors, and topological materials.