An antiferromagnetic spin phase change memory

Yan, H.; Mao, H.; Qin, P.; Wang, J.; Liang, H.; Zhou, X.; Wang, X.; Chen, H.; Meng, Z.; Liu, L.; Zhao, G.; Duan, Z.; Zhu, Z.; Fang, B.; Zeng, Z.; Bettiol, A. A.; Zhang, Q.; Tang, P.; Jiang, C.; Liu, Z.

doi:10.1038/s41467-024-49451-2

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学術論文

An antiferromagnetic spin phase change memory

MPS-Authors

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Tang, P.
School of Materials Science and Engineering, Beihang University;
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;

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https://doi.org/10.1038/s41467-024-49451-2
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suppl.zip
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引用

Yan, H., Mao, H., Qin, P., Wang, J., Liang, H., Zhou, X., Wang, X., Chen, H., Meng, Z., Liu, L., Zhao, G., Duan, Z., Zhu, Z., Fang, B., Zeng, Z., Bettiol, A. A., Zhang, Q., Tang, P., Jiang, C., & Liu, Z. (2024). An antiferromagnetic spin phase change memory. Nature Communications, 15(1):. doi:10.1038/s41467-024-49451-2.

引用: https://hdl.handle.net/21.11116/0000-000F-6DDA-2

要旨

The electrical outputs of single-layer antiferromagnetic memory devices relying on the anisotropic magnetoresistance effect are typically rather small at room temperature. Here we report a new type of antiferromagnetic memory based on the spin phase change in a Mn-Ir binary intermetallic thin film at a composition within the phase boundary between its collinear and noncollinear phases. Via a small piezoelectric strain, the spin structure of this composition-boundary metal is reversibly interconverted, leading to a large nonvolatile room-temperature resistance modulation that is two orders of magnitude greater than the anisotropic magnetoresistance effect for a metal, mimicking the well-established phase change memory from a quantum spin degree of freedom. In addition, this antiferromagnetic spin phase change memory exhibits remarkable time and temperature stabilities, and is robust in a magnetic field high up to 60 T.