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Journal Article

Room-temperature waveguide-coupled silicon single-photon avalanche diodes

MPS-Authors
/persons/resource/persons269781

Govdeli,  Alperen
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons260274

Straguzzi,  John N.
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons258003

Sacher,  Wesley D.       
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons257612

Poon,  Joyce K. S.       
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1038/s44310-024-00003-y
(Publisher version)

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s44310-024-00003-y.pdf
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Citation

Govdeli, A., Straguzzi, J. N., Yong, Z., Lin, Y., Luo, X., Chua, H., et al. (2024). Room-temperature waveguide-coupled silicon single-photon avalanche diodes. npj nanophotonics, 1: 2. doi:10.1038/s44310-024-00003-y.


Cite as: https://hdl.handle.net/21.11116/0000-000F-E01A-7
Abstract
Single photon detection is important for a wide range of low-light applications, including quantum information processing, spectroscopy, and light detection and ranging (LiDAR). A key challenge in these applications has been to integrate single-photon detection capability into photonic circuits for the realization of complex photonic microsystems. Short-wavelength (λ < 1.1 μm) integrated photonics platforms that use silicon (Si) as photodetectors offer the opportunity to achieve single-photon avalanche diodes (SPADs) that operate at or near room temperature. Here, we report the first waveguide-coupled Si SPAD. The device is monolithically integrated in a Si photonic platform and operates in the visible spectrum. The device exhibited a single photon detection efficiency of >6% for wavelengths of 488 and 532 nm with an excess voltage of <20% of the breakdown voltage. The dark count rate was below 100 kHz at room temperature, with the possibility of improving by approximately 35% by reducing the temperature to −5 °C.